2 # All the command has the syntax: keyword parameter=string|double
3 # String must begin with character or underline.
4 # Character, digital, underline and dot are allowed in string.
5 # The length of string is limited to 30 characters.
6 # Numerical value double support c syntax float point number.
7 # The Unit in command file.:
8 # Time Unit:ps voltage Unit:V Freq Unit:THz Length Unit:cm
9 #======================================================================
10 # static command, in lower case
11 set Carrier = pn # specify carrier type support p,n or pn
12 set DeviceDepth = 0.01 # device depth in Z dimension. Unit:cm
13 set LatticeTemp = 3e2 # specify initial temperature of device. Unit:K
14 #----------------------------------------------------------------------
16 # ID can be specified by user, limited to 32 characters, c syntax.
17 # reference: voltage source in spice model
18 vsource Type = VDC ID = GND Tdelay=0.123 Vconst=0
19 vsource Type = VDC ID = VCC Tdelay=0 Vconst=5
20 vsource Type = VSIN ID = Vs Tdelay=1 Vamp=0.1 Freq=1e-6
21 vsource Type = VEXP ID = V1 Tdelay=0 TRC=1 TFD=3 TFC=1 Vlo=0 Vhi=1
22 vsource Type = VPULSE ID = V2 Tdelay=0 Tr=1 Tf=1 Pw=5 Pr=10 Vlo=0 Vhi=1
23 #----------------------------------------------------------------------
25 # reference: current source in spice model
26 isource Type = IDC ID = I1 Tdelay=0 Iconst=5
27 isource Type = ISIN ID = I2 Tdelay=1 Iamp=0.1 Freq=1e-6
28 isource Type = IEXP ID = I3 Tdelay=0 TRC=1 TFD=3 TFC=1 Ilo=0 Ihi=1
29 isource Type = IPULSE ID = I4 Tdelay=0 Tr=1 Tf=1 Pw=5 Pr=10 Ilo=0 Ihi=1
30 #----------------------------------------------------------------------
31 # specify region type.
32 # GSS 0.3x can automatically set region type by RegionType in the cgns file
33 # But the material data file used by GSS 0.4x needs the explicit specification
34 #region Type = Semiconductor ID=Silicon0 Material=Si ParameterFile=Si.tcl
35 #region Type = Insolator ID=Oxide1 Material=SiO2 ParameterFile=SiO2.tcl
36 #region Type = Conductor ID=Elec2 Material=P-Si ParameterFile=P-Si.tcl
37 #----------------------------------------------------------------------
38 # specify boundary condition.
39 # ID must accord with the boundary name in cgns file
41 # OhmicContract|SchottkyContract|GateContract|InsulatorContract
42 # they have parameters of parasite res,cap and ind unit:Om,F,H
43 # SchottkyContract has an extra parameter,the barrier height.
44 # GateContract can specify the workfunc of gate electrode.
45 # InsulatorContract offers a simple way for describing Si/SiO2 interface,
46 # the Thick of oxide must be specified,
47 # electrode boundary and NeumannBoundary has convective heat transfer coefficient h. unit: W/cm^2/K
48 # and external temperature defined.
49 # InsulatorInterface is the interface of Si/SiO2, has a fixed charge density QF,unit ?
51 boundary Type = InsulatorContract ID = SiSiO2 Res=0 Cap=0 Ind=0 Thickness=1e-6 Eps=3.9 WorkFunction=4.7 QF=0
52 boundary Type = InsulatorInterface ID = IFACE QF=0
53 boundary Type = GateContract ID = GATE Res=0 Cap=0 Ind=0 WorkFunction=4.7
54 boundary Type = NeumannBoundary ID = WALL Heat.Transfer=0 EXT.Temp=300
55 boundary Type = SchottkyContract ID = sgate Res=0 Cap=0 Ind=0 VBarrier=0.8
56 boundary Type = OhmicContract ID = OMANODE Res=0 Cap=0 Ind=0
57 boundary Type = OhmicContract ID = OMCATHODE Res=0 Cap=0 Ind=0
58 boundary Type = OhmicContract ID = NSOURCE Res=0 Cap=0 Ind=0 ConnectTo=PDRAIN
59 boundary Type = OhmicContract ID = NDRAIN Res=0 Cap=0 Ind=0
60 boundary Type = OhmicContract ID = PSOURCE Res=0 Cap=0 Ind=0
61 boundary Type = OhmicContract ID = PDRAIN Res=0 Cap=0 Ind=0
62 boundary Type = OhmicContract ID = OMSUB Res=0 Cap=0 Ind=0
63 #FloatMetalGate may support later
65 #===========================================================================
66 # drive command, specify the solving process. # keyword is in upper care
67 # reference: medici user's guide
68 #---------------------------------------------
69 # METHOD Type = [DDML1|DDML2] Scheme = [Newton|Gummel] &
70 # NS = [Basic|LineSearch|TrustRegion] &
71 # LS = [LU|BCGS|GMRES]
72 #---------------------------------------------
73 # ATTACH Electrode = electrode_name Type=Voltage VApp = vsource_name1 VApp = vsource_name2 ...
74 # ATTACH Electrode = electrode_name Type=Current IApp = isource_name1 IApp = isource_name2 ...
75 #---------------------------------------------
76 # SOLVE Type = EQUILIBRIUM
77 # SOLVE Type = STEADYSTATE
78 # SOLVE Type = DCSWEEP VScan = electrode_name IV.Record = electrode_name &
79 # IV.File = file_name VStart = v_number VStep = v_number VStop = v_number
80 # SOLVE Type = TRANSIENT ODE.Formula = [BDF1|BDF2] AUTOSAVE = time_number IV.Record = electrode_name &
81 # IV.File = file_name TStart = time_number TStep = time_number TStop = time_number
82 #---------------------------------------------
83 # MODELS not supported yet
84 #---------------------------------------------
85 # IMPORT [CoreFile = file_name | ModelFile = file_name ]
86 #---------------------------------------------
87 # EXTRACT CoreFile = file_name AscFile = file_name
88 #---------------------------------------------
89 # REFINE Variable = [Doping|Potential] Measure = [Linear|SignedLog] Dispersion = number
90 #---------------------------------------------
91 # PLOT Variable = Mesh Resolution=[Low|Middle|High] PSFile=file_name
92 # PLOT Variable =[Na|Nd|ElecDensity|HoleDensity|Potential|EFieldX|EFieldy|Temperature]
93 # Resolution=[Low|Middle|High] PSFile=file_name Measure=[Linear|SignedLog]
94 # AzAngle=angle_number ElAngle=angle_number Style=[Scale|Color|GrayLevel]
95 #===========================================================================
97 METHOD Type = DDML1 Scheme = Newton TStep=1e3 #specify DDM method,this is the default solver.
98 PLOT Variable=DeviceMesh
99 REFINE Variable=Doping Measure=SignedLog Dispersion=1 #refine by doping
100 SOLVE Type=EQUILIBRIUM #compute equilibrium state
101 REFINE Variable=Potential Measure=Linear Dispersion=0.1 #refine by potential
102 PLOT Variable=DeviceMesh
103 SOLVE Type=EQUILIBRIUM #compute equilibrium state again
104 PLOT Variable=Na Resolution=RES.Middle AzAngle=240 ElAngle=40 Style=Scale
105 PLOT Variable=Nd Resolution=RES.Middle AzAngle=240 ElAngle=40 Style=Scale
106 PLOT Variable=ElecDensity PSFile=electron Resolution=RES.High AzAngle=240 ElAngle=40 Style=Color
107 PLOT Variable=HoleDensity PSFile=hole Resolution=RES.High AzAngle=240 ElAngle=40 Style=Color
108 PLOT Variable=Potential Resolution=RES.High AzAngle=240 ElAngle=40 Style=GrayLevel
109 # extract mesh and solution
110 EXTRACT CoreFile=init.cgns
112 IMPORT CoreFile=init.cgns # import it
113 ATTACH Electrode=OMCATHODE VApp=GND # attach vsource to boundary(electrode)
115 SOLVE Type=DCSWEEP VScan=OMANODE IVRecord=OMANODE IVFile=iv.txt VStart=0 VStep=1e-2 VStop=1
117 #IMPORT CoreFile=break.cgns
118 #ATTACH Electrode=OMANODE VApp=VCC VApp=Vs