1 # HYNIX-4GBYTE-1333 The H9 N0 SPD delivered by Hynix
3 # SPD contents for APU 4GB DDR3 ECC (1333MHz PC1333) soldered down
4 # 0 Number of SPD Bytes used / Total SPD Size / CRC Coverage
5 # bits[3:0]: 1 = 128 SPD Bytes Used
6 # bits[6:4]: 1 = 256 SPD Bytes Total
7 # bit7 : 0 = CRC covers bytes 0 ~ 128
13 # 2 Key Byte / DRAM Device Type
14 # bits[7:0]: 0x0b = DDR3 SDRAM
17 # 3 Key Byte / Module Type
18 # bits[3:0]: 3 = SO-DIMM
19 # bits[3:0]: 8 = 72b-SO-DIMM
23 # 4 SDRAM CHIP Density and Banks
24 # bits[3:0]: 3 = 2 Gigabits Total SDRAM capacity per chip
25 # bits[3:0]: 4 = 4 Gigabits Total SDRAM capacity per chip
26 # bits[6:4]: 0 = 3 (8 banks)
31 # bits[2:0]: 1 = 10 Column Address Bits
32 # bits[5:3]: 4 = 16 Row Address Bits
33 # bits[5:3]: 3 = 15 Row Address Bits
34 # bits[5:3]: 2 = 14 Row Address Bits
38 # 6 Module Nominal Voltage, VDD
39 # bit0 : 0 = 1.5 V operable
40 # bit1 : 0 = NOT 1.35 V operable
41 # bit2 : 0 = NOT 1.25 V operable
45 # 7 Module Organization
46 # bits[2:0]: 1 = 8 bits
47 # bits[2:0]: 2 = 16 bits
48 # bits[5:3]: 0 = 1 Rank
52 # 8 Module Memory Bus Width
53 # bits[2:0]: 3 = Primary bus width is 64 bits
54 # bits[4:3]: 0 = 0 bits (no bus width extension)
55 # bits[4:3]: 1 = 8 bits (for ECC)
59 # 9 Fine Timebase (FTB) Dividend / Divisor
60 # bits[3:0]: 0x02 divisor
61 # bits[7:4]: 0x05 dividend
65 # 10 Medium Timebase (MTB) Dividend
66 # 11 Medium Timebase (MTB) Divisor
70 # 12 SDRAM Minimum Cycle Time (tCKmin)
71 # 0x0a = tCKmin of 1.25 ns = DDR3-1600 (800 MHz clock)
72 # 0x0c = tCKmin of 1.5 ns = DDR3-1333 (667 MHz clock)
73 # 0x0c = tCKmin of 1.5 ns = in multiples of MTB
79 # 14 CAS Latencies Supported, Least Significant Byte
80 # 15 CAS Latencies Supported, Most Significant Byte
81 # Cas Latencies of 11 - 5 are supported
84 # 16 Minimum CAS Latency Time (tAAmin)
85 # 0x6C = 13.5ns - DDR3-1333
86 # 0x69 = 13.125 ns - DDR3-1333
89 # 17 Minimum Write Recovery Time (tWRmin)
90 # 0x78 = tWR of 15ns - All DDR3 speed grades
93 # 18 Minimum RAS# to CAS# Delay Time (tRCDmin)
94 # 0x6E = 13.5ns - DDR3-1333
95 # 0x69 = 13.125 ns - DDR3-1333
98 # 19 Minimum Row Active to Row Active Delay Time (tRRDmin)
104 # 20 Minimum Row Precharge Delay Time (tRPmin)
106 # 0x69 = 13.125 ns - DDR3-1333
109 # 21 Upper Nibbles for tRAS and tRC
110 # bits[3:0]: tRAS most significant nibble = 1 (see byte 22)
111 # bits[7:4]: tRC most significant nibble = 1 (see byte 23)
114 # 22 Minimum Active to Precharge Delay Time (tRASmin), LSB
115 # 0x120 = 36ns - DDR3-1333 (see byte 21)
116 # 0x120 = 36ns - DDR3
119 # 23 Minimum Active to Active/Refresh Delay Time (tRCmin), LSB
120 # 0x28C = 49.5ns - DDR3-1333
121 # 0x289 = 49.125ns - DDR3-1333
124 # 24 Minimum Refresh Recovery Delay Time (tRFCmin), LSB
125 # 25 Minimum Refresh Recovery Delay Time (tRFCmin), MSB
126 # 0x500 = 160ns - for 2 Gigabit chips
127 # 0x820 = 260ns - for 4 Gigabit chips
130 # 26 Minimum Internal Write to Read Command Delay Time (tWTRmin)
131 # 0x3c = 7.5 ns - All DDR3 SDRAM speed bins
134 # 27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin)
135 # 0x3c = 7.5ns - All DDR3 SDRAM speed bins
138 # 28 Upper Nibble for tFAWmin
139 # 29 Minimum Four Activate Window Delay Time (tFAWmin)
140 # 0x00F0 = 30ns - DDR3-1333, 1 KB page size
143 # 30 SDRAM Optional Feature
144 # bit0 : 1= RZQ/6 supported
145 # bit1 : 1 = RZQ/7 supported
146 # bits[6:2]: reserved
147 # bit7 : 1 = DLL Off mode supported
150 # 31 SDRAM Thermal and Refresh Options
151 # bit0 : 1 = Temp up to 95c supported
152 # bit1 : 0 = 85-95c uses 2x refresh rate
153 # bit2 : 1 = Auto Self Refresh supported
154 # bit3 : 0 = no on die thermal sensor
155 # bits[6:4]: reserved
156 # bit7 : 0 = partial self refresh supported
159 # 32 Module Thermal Sensor
160 # 0 = Thermal sensor not incorporated onto this assembly
163 # 33 SDRAM Device Type
164 # bits[1:0]: 0 = Signal Loading not specified
165 # bits[3:2]: reserved
166 # bits[6:4]: 0 = Die count not specified
167 # bit7 : 0 = Standard Monolithic DRAM Device
170 # 34 Fine Offset for SDRAM Minimum Cycle Time (tCKmin)
172 # 35 Fine Offset for Minimum CAS Latency Time (tAAmin)
174 # 36 Fine Offset for Minimum RAS# to CAS# Delay Time (tRCDmin)
176 # 37 Fine Offset for Minimum Row Precharge Delay Time (tRPmin)
178 # 38 Fine Offset for Minimum Active to Active/Refresh Delay (tRCmin)
192 00 00 00 00 00 00 00 00
197 # 60 Raw Card Extension, Module Nominal Height
198 # bits[4:0]: 0 = <= 15mm tall
199 # bits[7:5]: 0 = raw card revision 0-3
202 # 61 Module Maximum Thickness
203 # bits[3:0]: 0 = thickness front <= 1mm
204 # bits[7:4]: 0 = thinkness back <= 1mm
207 # 62 Reference Raw Card Used
208 # bits[4:0]: 0 = Reference Raw card A used
209 # bits[6:5]: 0 = revision 0
210 # bit7 : 0 = Reference raw cards A through AL
214 # 63 Address Mapping from Edge Connector to DRAM
215 # bit0 : 0 = standard mapping (not mirrored)
216 # bits[7:1]: reserved
220 00 00 00 00 00 00 00 00
223 00 00 00 00 00 00 00 00
226 00 00 00 00 00 00 00 00
229 00 00 00 00 00 00 00 00
231 # 96 - 103 (reserved)
232 00 00 00 00 00 00 00 00
234 # 104 - 111 (reserved)
235 00 00 00 00 00 00 00 00
237 # 112 - 116 (reserved)
240 # 117 - 118 Module ID: Module Manufacturers JEDEC ID Code
244 # 119 Module ID: Module Manufacturing Location - oem specified
247 # 120 Module ID: Module Manufacture Year in BCD
249 # 121 Module ID: Module Manufacture week
253 # 122 - 125: Module Serial Number
256 # 126 - 127: Cyclical Redundancy Code