1 # semiconductor "capacitor" test
23 #Freq v(1) v(2) vp(2) vdb(2)
24 15.9Meg 1. 0.70745 -44.972 -3.0061
25 #Freq v(1) v(2) vp(2) vdb(2)
26 1.Meg 1. 0.99803 -3.5953 -0.017112
27 2.1544Meg 1. 0.99096 -7.7091 -0.078861
28 4.6416Meg 1. 0.96001 -16.259 -0.35451
29 10.Meg 1. 0.84673 -32.142 -1.4451
30 21.544Meg 1. 0.59418 -53.546 -4.5216
31 46.416Meg 1. 0.32435 -71.074 -9.7797
32 100.Meg 1. 0.15718 -80.957 -16.072
33 215.44Meg 1. 0.073672 -85.775 -22.654
34 464.16Meg 1. 0.034269 -88.036 -29.302
35 1.G 1. 0.015913 -89.088 -35.965
36 v1 ( 1 0 ) TRAN pwl( 0., 0. 1.999999n, 0. 2.000001n, 1. ) DC 2. AC 1.
38 c2 ( 2 0 ) t1 l= 1.u w= 2.u
39 .model t1 c ( cj=5 cjsw=NA( 0.) narrow=NA( 0.) defw=NA( 1.u) tc1=NA( 0.) tc2=NA( 0.) tnom=NA( 27.))
41 iterations: op=4, dc=0, tran=61, fourier=0, total=94
42 transient timesteps: accepted=18, rejected=0, total=18
43 nodes: user=2, subckt=0, model=0, total=2
44 dctran density=100.0%, ac density=100.0%