modules/d_mos123.h

   1 /* $Id: d_mos123.h,v 1.2 2009-12-14 14:25:38 felix Exp $ -*- C++ -*-
   2  * Copyright (C) 2001 Albert Davis
   3  * Author: Albert Davis <aldavis@gnu.org>
   4  *
   5  * This file is part of "Gnucap", the Gnu Circuit Analysis Package
   6  *
   7  * This program is free software; you can redistribute it and/or modify
   8  * it under the terms of the GNU General Public License as published by
   9  * the Free Software Foundation; either version 3, or (at your option)
  10  * any later version.
  11  *
  12  * This program is distributed in the hope that it will be useful,
  13  * but WITHOUT ANY WARRANTY; without even the implied warranty of
  14  * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.  See the
  15  * GNU General Public License for more details.
  16  *
  17  * You should have received a copy of the GNU General Public License
  18  * along with this program; if not, write to the Free Software
  19  * Foundation, Inc., 51 Franklin Street, Fifth Floor, Boston, MA
  20  * 02110-1301, USA.
  21  *------------------------------------------------------------------
  22  * MOS model - base for levels 1,2,3,6
  23  */
  24 /* This file is automatically generated. DO NOT EDIT */
  25 #ifndef D_MOS123_H_INCLUDED
  26 #define D_MOS123_H_INCLUDED
  27
  28 #include "d_mos_base.h"
  29   enum gate_t {gtSAME = -1, gtMETAL = 0, gtOPP = 1};
  30   const double NI = 1.45e16;    /* intrinsic carrier concentration */
  31 #include "u_sdp.h"
  32 #include "e_adp_mos.h"
  33 #include "e_node.h"
  34 #include "e_subckt.h"
  35 #include "e_model.h"
  36
  37 namespace UF{
  38 /*--------------------------------------------------------------------------*/
  39 class ADP_BUILT_IN_MOS123
  40   :public ADP_BUILT_IN_MOS{
  41 public:
  42   explicit ADP_BUILT_IN_MOS123( COMPONENT* c, const std::string n);
  43 public:
  44   double vto;  // replace m->vto
  45
  46   void tr_accept();
  47 };
  48 /*--------------------------------------------------------------------------*/
  49 class SDP_BUILT_IN_MOS123
  50   :public SDP_BUILT_IN_MOS_BASE{
  51 public:
  52   explicit SDP_BUILT_IN_MOS123(const COMMON_COMPONENT* c) : SDP_BUILT_IN_MOS_BASE(c) {init(c);}
  53   void init(const COMMON_COMPONENT*);
  54 public:
  55 };
  56 /*--------------------------------------------------------------------------*/
  57 class DEV_BUILT_IN_MOS;
  58 class TDP_BUILT_IN_MOS123
  59   :public TDP_BUILT_IN_MOS_BASE{
  60 public:
  61   explicit TDP_BUILT_IN_MOS123(const DEV_BUILT_IN_MOS*);
  62 public:
  63 };
  64 /*--------------------------------------------------------------------------*/
  65 class MODEL_BUILT_IN_MOS123
  66   :public MODEL_BUILT_IN_MOS_BASE{
  67 protected:
  68   explicit MODEL_BUILT_IN_MOS123(const MODEL_BUILT_IN_MOS123& p);
  69 public:
  70   explicit MODEL_BUILT_IN_MOS123(const BASE_SUBCKT*);
  71   ~MODEL_BUILT_IN_MOS123() {--_count;}
  72 public: // override virtual
  73   std::string dev_type()const;
  74   void      set_dev_type(const std::string& nt);
  75   CARD*     clone()const {return new MODEL_BUILT_IN_MOS123(*this);}
  76   void      precalc_first();
  77   void      precalc_last();
  78   SDP_CARD* new_sdp( COMMON_COMPONENT* c)const;
  79   ADP_CARD* new_adp( COMPONENT* c)const; // COMPONENT nicht const, wegen counter?
  80   void      set_param_by_index(int, std::string&, int);
  81   bool      param_is_printable(int)const;
  82   std::string param_name(int)const;
  83   std::string param_name(int,int)const;
  84   std::string param_value(int)const;
  85   int param_count()const {return (15 + MODEL_BUILT_IN_MOS_BASE::param_count());}
  86   bool      is_valid(const COMPONENT*)const;
  87   void      tr_eval(COMPONENT*)const;
  88
  89   void do_tr_stress( const COMPONENT* c ) const;
  90
  91
  92
  93 public: // not virtual
  94   static int count() {return _count;}
  95 private: // strictly internal
  96   static int _count;
  97 public: // input parameters
  98   PARAMETER<double> vto_raw;    // zero-bias threshold voltage
  99   PARAMETER<double> gamma;      // bulk threshold parameter
 100   PARAMETER<double> phi;        // surface potential
 101   PARAMETER<double> lambda;     // channel-length modulation
 102   PARAMETER<double> tox;        // oxide thickness
 103   PARAMETER<double> nsub_cm;    // substrate doping
 104   PARAMETER<double> nss_cm;     // surface state density
 105   PARAMETER<double> xj; // metallurgical junction depth
 106   PARAMETER<double> uo_cm;      // surface mobility
 107   PARAMETER<int> tpg;   // type of gate material - really gate_t
 108 public: // calculated parameters
 109   double nsub;  //
 110   double nss;   //
 111   double uo;    //
 112   double vto;   //
 113   double cox;   // oxide capacitance (E_OX / tox)
 114   bool calc_vto;        //
 115   bool calc_gamma;      //
 116   bool calc_phi;        //
 117 protected: // ttt start values. not needed outside (?)
 118   // ADP ids_stress; in BASE
 119   double vto_0; // ?
 120   double vto_raw_0; ///?
 121 public:
 122   virtual void do_stress_apply(COMPONENT*) const;
 123   virtual void do_tt_prepare(COMPONENT*) const;
 124 };
 125 /*--------------------------------------------------------------------------*/
 126 /*--------------------------------------------------------------------------*/
 127 /*--------------------------------------------------------------------------*/
 128 }
 129 #endif