modules/d_mos8.h

   1 /* $Id: d_mos8.h,v 1.7 2010-09-07 07:46:21 felix Exp $ -*- C++ -*-
   2  * vim:ts=8:sw=2:et:
   3  * Copyright (C) 2001 Albert Davis
   4  * Author: Albert Davis <aldavis@gnu.org>
   5  *
   6  * This file is part of "Gnucap", the Gnu Circuit Analysis Package
   7  *
   8  * This program is free software; you can redistribute it and/or modify
   9  * it under the terms of the GNU General Public License as published by
  10  * the Free Software Foundation; either version 3, or (at your option)
  11  * any later version.
  12  *
  13  * This program is distributed in the hope that it will be useful,
  14  * but WITHOUT ANY WARRANTY; without even the implied warranty of
  15  * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.  See the
  16  * GNU General Public License for more details.
  17  *
  18  * You should have received a copy of the GNU General Public License
  19  * along with this program; if not, write to the Free Software
  20  * Foundation, Inc., 51 Franklin Street, Fifth Floor, Boston, MA
  21  * 02110-1301, USA.
  22  *------------------------------------------------------------------
  23  * Berkeley BSIM3v3.3 model
  24  **********  derived from.........
  25  * Copyright 2004 Regents of the University of California. All rights reserved.
  26  * File: b3ld.c of BSIM3v3.3.0
  27  * Author: 1991 JianHui Huang and Min-Chie Jeng.
  28  * Modified by Mansun Chan (1995).
  29  * Author: 1997-1999 Weidong Liu.
  30  * Author: 2001 Xuemei Xi
  31  * Modified by Xuemei Xi, 10/05, 12/21, 2001.
  32  * Modified by Xuemei Xi, 07/29/2005.
  33  **********
  34  * Recoded for Gnucap model compiler, Al Davis, 2006
  35  */
  36 /* This file is automatically generated. DO NOT EDIT */
  37 #ifndef D_MOS8_H_INCLUDED
  38 #define D_MOS8_H_INCLUDED
  39
  40 #include "d_mos_base.h"
  41 #include "e_adp_mos.h"
  42 #include "u_sdp.h"
  43 #include "e_node.h"
  44 #include "e_subckt.h"
  45 #include "e_model.h"
  46 namespace UF{
  47 /*--------------------------------------------------------------------------*/
  48 class ADP_BUILT_IN_MOS8 :public ADP_BUILT_IN_MOS{
  49   friend class MODEL_BUILT_IN_MOS8; // HACK
  50
  51   long double _hci_tr; //?
  52   long double _hci_stress; //?
  53   ADP_BUILT_IN_MOS8( const ADP_BUILT_IN_MOS8& a);
  54 public:
  55   explicit ADP_BUILT_IN_MOS8( COMPONENT* c, const std::string n):
  56     ADP_BUILT_IN_MOS(c,n) // , _raw_hci_node(0)
  57     {
  58       init(c);
  59     }
  60
  61   virtual ADP_CARD* clone()const{ return new ADP_BUILT_IN_MOS8(*this); }
  62 protected:
  63   void init(const COMPONENT*);
  64 public:
  65   hp_float_t vthscale_hci;
  66   hp_float_t vthdelta_hci;
  67 //  hp_float_t vthdelta; (ADP_BUILT_IN_MOS)
  68
  69   virtual double tt_probe_num(const std::string& x)const;
  70   virtual double tr_probe_num(const std::string& x)const;
  71   void expand();
  72
  73 private:
  74  // ADP_NODE* _raw_hci_node;
  75
  76 private: // overrides
  77   void tt_begin();
  78   void tt_accept();
  79   void tt_advance();
  80   void tr_accept();
  81   void tr_stress_last();
  82   void apply(const COMPONENT*);
  83
  84 };
  85 /*--------------------------------------------------------------------------*/
  86 class SDP_BUILT_IN_MOS8
  87   :public SDP_BUILT_IN_MOS_BASE{
  88 public:
  89   explicit SDP_BUILT_IN_MOS8(const COMMON_COMPONENT* c) : SDP_BUILT_IN_MOS_BASE(c) {init(c);}
  90   void init(const COMMON_COMPONENT*);
  91 public:
  92   // double h0; // some hci paramater
  93   double cdsc;  // Drain/Source and channel coupling capacitance Q/V/m^2
  94   double cdscb; // Body-bias dependence of cdsc Q/V/m^2
  95   double cdscd; // Drain-bias dependence of cdsc Q/V/m^2
  96   double cit;   // Interface state capacitance Q/V/m^2
  97   double nfactor;       // Subthreshold swing Coefficient
  98   double xj;    // Junction depth in meters
  99   double vsat;  // Saturation velocity at tnom m/s
 100   double at;    // Temperature coefficient of vsat m/s
 101   double a0;    // Non-uniform depletion width effect coefficient.
 102   double ags;   // Gate bias  coefficient of Abulk.
 103   double a1;    // Non-saturation effect coefficient
 104   double a2;    // Non-saturation effect coefficient
 105   double keta;  // Body-bias coefficient of non-uniform depletion width effect. 1/v
 106   double nsub;  // Substrate doping concentration 1/cm3
 107   double npeak; // Channel doping concentration 1/cm3
 108   double ngate; // Poly-gate doping concentration 1/cm3
 109   double gamma1;        // Vth body coefficient
 110   double gamma2;        // Vth body coefficient
 111   double vbx;   // Vth transition body Voltage
 112   double vbm;   // Maximum body voltage
 113   double xt;    // Doping depth
 114   double k1;    // Bulk effect coefficient 1
 115   double kt1;   // Temperature coefficient of Vth
 116   double kt1l;  // Temperature coefficient of Vth
 117   double kt2;   // Body-coefficient of kt1
 118   double k2;    // Bulk effect coefficient 2
 119   double k3;    // Narrow width effect coefficient
 120   double k3b;   // Body effect coefficient of k3
 121   double w0;    // Narrow width effect parameter
 122   double nlx;   // Lateral non-uniform doping effect
 123   double dvt0;  // Short channel effect coeff. 0
 124   double dvt1;  // Short channel effect coeff. 1
 125   double dvt2;  // Short channel effect coeff. 2 1/v
 126   double dvt0w; // Narrow Width coeff. 0
 127   double dvt1w; // Narrow Width effect coeff. 1
 128   double dvt2w; // Narrow Width effect coeff. 2
 129   double drout; // DIBL coefficient of output resistance
 130   double dsub;  // DIBL coefficient in the subthreshold region
 131   double vth0;  // Threshold voltage
 132   double ua1;   // Temperature coefficient of ua m/v
 133   double ua;    // Linear gate dependence of mobility m/v
 134   double ub1;   // Temperature coefficient of ub (m/V)**2
 135   double ub;    // Quadratic gate dependence of mobility (m/V)**2
 136   double uc1;   // Temperature coefficient of uc
 137   double uc;    // Body-bias dependence of mobility
 138   double u0;    // Low-field mobility at Tnom
 139   double ute;   // Temperature coefficient of mobility
 140   double voff;  // Threshold voltage offset
 141   double delta; // Effective Vds parameter
 142   double rdsw;  // Source-drain resistance per width
 143   double prwg;  // Gate-bias effect on parasitic resistance
 144   double prwb;  // Body-effect on parasitic resistance
 145   double prt;   // Temperature coefficient of parasitic resistance
 146   double eta0;  // Subthreshold region DIBL coefficient
 147   double etab;  // Subthreshold region DIBL coefficient 1/v
 148   double pclm;  // Channel length modulation Coefficient
 149   double pdibl1;        // Drain-induced barrier lowering coefficient
 150   double pdibl2;        // Drain-induced barrier lowering coefficient
 151   double pdiblb;        // Body-effect on drain-induced barrier lowering 1/v
 152   double pscbe1;        // Substrate current body-effect coefficient
 153   double pscbe2;        // Substrate current body-effect coefficient
 154   double pvag;  // Gate dependence of output resistance parameter
 155   double wr;    // Width dependence of rds
 156   double dwg;   // Width reduction parameter
 157   double dwb;   // Width reduction parameter
 158   double b0;    // Abulk narrow width parameter
 159   double b1;    // Abulk narrow width parameter
 160   double alpha0;        // substrate current model parameter
 161   double beta0; // substrate current model parameter
 162   double elm;   // Non-quasi-static Elmore Constant Parameter
 163   double vfbcv; // Flat Band Voltage parameter for capmod=0 only
 164   double cgsl;  // New C-V model parameter
 165   double cgdl;  // New C-V model parameter
 166   double ckappa;        // New C-V model parameter
 167   double cf;    // Fringe capacitance parameter
 168   double clc;   // Vdsat parameter for C-V model
 169   double cle;   // Vdsat parameter for C-V model
 170   double vfb;   // Flat Band Voltage
 171   double acde;  // Exponential coefficient for finite charge thickness, capmod=3
 172   double moin;  // Coefficient for gate-bias dependent surface potential, capmod=3
 173   double noff;  // C-V turn-on/off parameter, capmod=1,2,3
 174   double voffcv;        // C-V lateral-shift parameter, capmod=1,2,3
 175   double alpha1;        // substrate current model parameter
 176   double dl;    //
 177   double dlc;   //
 178   double dw;    //
 179   double dwc;   //
 180   double leff;  //
 181   double weff;  //
 182   double leffCV;        //
 183   double weffCV;        //
 184   double abulkCVfactor; //
 185   double litl;  //
 186   double ldeb;  //
 187 private:
 188   double dw_effdw_in(const COMMON_COMPONENT*) const{return 1;}
 189   double dl_effdl_in(const COMMON_COMPONENT*) const{return 1;}
 190 };
 191 /*--------------------------------------------------------------------------*/
 192 /*--------------------------------------------------------------------------*/
 193
 194 class DEV_BUILT_IN_MOS;
 195 class TDP_BUILT_IN_MOS8
 196   :public TDP_BUILT_IN_MOS_BASE{
 197 public:
 198   explicit TDP_BUILT_IN_MOS8(const DEV_BUILT_IN_MOS*);
 199   // double    tr_probe_num(const std::string&)const;
 200 public:
 201   double temp;  //
 202   double tempratio;     //
 203   double tempratio_1;   //
 204   double vtm;   // vtm
 205   double ua;    //
 206   double dua_dW;
 207   double dua_dL;
 208   double ub;    //
 209   double dub_dW;
 210   double dub_dL;
 211   double uc;    //
 212   double duc_dW;
 213   double duc_dL;
 214   double u0temp;        //
 215   double vsattemp;      //
 216   double rds0;  //
 217   double drds0_dW;      //
 218   double drds0_dL;      //
 219   double phi;   //
 220   double sqrtPhi;       //
 221   double phis3; //
 222   double Xdep0; //
 223   double vbi;   //
 224   double cdep0; //
 225   double k1;    //
 226   double k2;    //
 227   double vbsc;  //
 228   double vth0;
 229   double dvth0_dW;
 230   double dvth0_dL;
 231   double vfb;   //
 232   double dvfb_dW;
 233   double dvfb_dL;
 234   double theta0vb0;     //
 235   double dtheta0vb0_dW;
 236   double dtheta0vb0_dL;
 237   double thetaRout;     //
 238   double dthetaRout_dW; //
 239   double dthetaRout_dL; //
 240   double k1ox;  //
 241   double k2ox;  //
 242   double vfbzb; //
 243 };
 244 /*--------------------------------------------------------------------------*/
 245 class MODEL_BUILT_IN_MOS8
 246   :public MODEL_BUILT_IN_MOS_BASE{
 247 protected:
 248   explicit MODEL_BUILT_IN_MOS8(const MODEL_BUILT_IN_MOS8& p);
 249 public:
 250   explicit MODEL_BUILT_IN_MOS8(const BASE_SUBCKT*);
 251   ~MODEL_BUILT_IN_MOS8() {--_count;}
 252   virtual ADP_CARD* new_adp( COMPONENT* c)const; //alles const. attach vielleicht !const
 253 public: // override virtual
 254   void do_stress_apply(COMPONENT* c)const;
 255   void do_tr_stress( const COMPONENT* c ) const;
 256   std::string dev_type()const;
 257   void      set_dev_type(const std::string& nt);
 258   CARD*     clone()const {return new MODEL_BUILT_IN_MOS8(*this);}
 259   void      precalc_first();
 260   void      precalc_last();
 261   SDP_CARD* new_sdp(COMMON_COMPONENT* c)const;
 262   void      set_param_by_index(int, std::string&, int);
 263   bool      param_is_printable(int)const;
 264   std::string param_name(int)const;
 265   std::string param_name(int,int)const;
 266   std::string param_value(int)const;
 267   int param_count()const {return (395 + MODEL_BUILT_IN_MOS_BASE::param_count());}
 268   bool      is_valid(const COMPONENT*)const;
 269   void      tr_eval(COMPONENT*)const;
 270   void      sens_eval(COMPONENT*)const;
 271   virtual const COMPONENT* hci_device()const;
 272 public: // not virtual
 273   static int count() {return _count;}
 274 private: // strictly internal
 275   static int _count;
 276 public: // input parameters
 277   // SDP h0;
 278   SDP cdsc;     // Drain/Source and channel coupling capacitance Q/V/m^2
 279   SDP cdscb;    // Body-bias dependence of cdsc Q/V/m^2
 280   SDP cdscd;    // Drain-bias dependence of cdsc Q/V/m^2
 281   SDP cit;      // Interface state capacitance Q/V/m^2
 282   SDP nfactor;  // Subthreshold swing Coefficient
 283   SDP xj;       // Junction depth in meters
 284   SDP vsat;     // Saturation velocity at tnom m/s
 285   SDP at;       // Temperature coefficient of vsat m/s
 286   SDP a0;       // Non-uniform depletion width effect coefficient.
 287   SDP ags;      // Gate bias  coefficient of Abulk.
 288   SDP a1;       // Non-saturation effect coefficient
 289   SDP a2;       // Non-saturation effect coefficient
 290   SDP keta;     // Body-bias coefficient of non-uniform depletion width effect. 1/v
 291   SDP nsub;     // Substrate doping concentration 1/cm3
 292   SDP npeak;    // Channel doping concentration 1/cm3 // BUG? why SDP?!
 293   SDP ngate;    // Poly-gate doping concentration 1/cm3
 294   SDP gamma1;   // Vth body coefficient
 295   SDP gamma2;   // Vth body coefficient
 296   SDP vbx;      // Vth transition body Voltage
 297   SDP vbm;      // Maximum body voltage
 298   SDP xt;       // Doping depth
 299   SDP k1;       // Bulk effect coefficient 1
 300   SDP kt1;      // Temperature coefficient of Vth
 301   SDP kt1l;     // Temperature coefficient of Vth
 302   SDP kt2;      // Body-coefficient of kt1
 303   SDP k2;       // Bulk effect coefficient 2
 304   SDP k3;       // Narrow width effect coefficient
 305   SDP k3b;      // Body effect coefficient of k3
 306   SDP w0;       // Narrow width effect parameter
 307   SDP nlx;      // Lateral non-uniform doping effect
 308   SDP dvt0;     // Short channel effect coeff. 0
 309   SDP dvt1;     // Short channel effect coeff. 1
 310   SDP dvt2;     // Short channel effect coeff. 2 1/v
 311   SDP dvt0w;    // Narrow Width coeff. 0
 312   SDP dvt1w;    // Narrow Width effect coeff. 1
 313   SDP dvt2w;    // Narrow Width effect coeff. 2
 314   SDP drout;    // DIBL coefficient of output resistance
 315   SDP dsub;     // DIBL coefficient in the subthreshold region
 316   SDP vth0;     // Threshold voltage
 317   SDP ua1;      // Temperature coefficient of ua m/v
 318   SDP ua;       // Linear gate dependence of mobility m/v
 319   SDP ub1;      // Temperature coefficient of ub (m/V)**2
 320   SDP ub;       // Quadratic gate dependence of mobility (m/V)**2
 321   SDP uc1;      // Temperature coefficient of uc
 322   SDP uc;       // Body-bias dependence of mobility
 323   SDP u0;       // Low-field mobility at Tnom
 324   SDP ute;      // Temperature coefficient of mobility
 325   SDP voff;     // Threshold voltage offset
 326   SDP delta;    // Effective Vds parameter
 327   SDP rdsw;     // Source-drain resistance per width
 328   SDP prwg;     // Gate-bias effect on parasitic resistance
 329   SDP prwb;     // Body-effect on parasitic resistance
 330   SDP prt;      // Temperature coefficient of parasitic resistance
 331   SDP eta0;     // Subthreshold region DIBL coefficient
 332   SDP etab;     // Subthreshold region DIBL coefficient 1/v
 333   SDP pclm;     // Channel length modulation Coefficient
 334   SDP pdibl1;   // Drain-induced barrier lowering coefficient
 335   SDP pdibl2;   // Drain-induced barrier lowering coefficient
 336   SDP pdiblb;   // Body-effect on drain-induced barrier lowering 1/v
 337   SDP pscbe1;   // Substrate current body-effect coefficient
 338   SDP pscbe2;   // Substrate current body-effect coefficient
 339   SDP pvag;     // Gate dependence of output resistance parameter
 340   SDP wr;       // Width dependence of rds
 341   SDP dwg;      // Width reduction parameter
 342   SDP dwb;      // Width reduction parameter
 343   SDP b0;       // Abulk narrow width parameter
 344   SDP b1;       // Abulk narrow width parameter
 345   SDP alpha0;   // substrate current model parameter
 346   SDP beta0;    // substrate current model parameter
 347   SDP elm;      // Non-quasi-static Elmore Constant Parameter
 348   SDP vfbcv;    // Flat Band Voltage parameter for capmod=0 only
 349   SDP cgsl;     // New C-V model parameter
 350   SDP cgdl;     // New C-V model parameter
 351   SDP ckappa;   // New C-V model parameter
 352   SDP cf;       // Fringe capacitance parameter
 353   SDP clc;      // Vdsat parameter for C-V model
 354   SDP cle;      // Vdsat parameter for C-V model
 355   SDP vfb;      // Flat Band Voltage
 356   SDP acde;     // Exponential coefficient for finite charge thickness, capmod=3
 357   SDP moin;     // Coefficient for gate-bias dependent surface potential, capmod=3
 358   SDP noff;     // C-V turn-on/off parameter, capmod=1,2,3
 359   SDP voffcv;   // C-V lateral-shift parameter, capmod=1,2,3
 360   SDP alpha1;   // substrate current model parameter
 361   PARAMETER<int> capMod;        // Capacitance model selector (0, 1, 2, other?)
 362   PARAMETER<int> nqsMod;        // Non-quasi-static model selector (0, !0)
 363   PARAMETER<int> mobMod;        // Mobility model selector (1,2,3,other?)
 364   PARAMETER<int> noiMod;        // Noise model selector (not used)
 365   PARAMETER<int> paramChk;      // Model parameter checking selector (not used)
 366   PARAMETER<int> binUnit;       // Bin unit selector (1, !1)
 367   PARAMETER<double> version;    // parameter for model version (not used)
 368   PARAMETER<double> tox;        // Gate oxide thickness in meters
 369   PARAMETER<double> xpart;      // Channel charge partitioning
 370   PARAMETER<double> jctSidewallSatCurDensity;   // Sidewall junction reverse saturation current density
 371   PARAMETER<double> mjswg;      // Source/drain (gate side) sw junction capacitance grading coefficient
 372   PARAMETER<double> pbswg;      // Source/drain (gate side) sw junction capacitance built in potential
 373   PARAMETER<double> unitLengthGateSidewallJctCap;       // Source/drain (gate side) sidewall junction capacitance per unit width
 374   PARAMETER<double> jctEmissionCoeff;   // Source/drain junction emission coefficient
 375   PARAMETER<double> jctTempExponent;    // Junction current temperature exponent
 376   PARAMETER<double> Lint;       // Length reduction parameter
 377   PARAMETER<double> Ll; // Length reduction parameter
 378   PARAMETER<double> Lln;        // Length reduction parameter
 379   PARAMETER<double> Lw; // Length reduction parameter
 380   PARAMETER<double> Lwn;        // Length reduction parameter
 381   PARAMETER<double> Lwl;        // Length reduction parameter
 382   PARAMETER<double> Wint;       // Width reduction parameter
 383   PARAMETER<double> Wl; // Width reduction parameter
 384   PARAMETER<double> Wln;        // Width reduction parameter
 385   PARAMETER<double> Ww; // Width reduction parameter
 386   PARAMETER<double> Wwn;        // Width reduction parameter
 387   PARAMETER<double> Wwl;        // Width reduction parameter
 388   PARAMETER<double> dwc;        // Delta W for C-V model
 389   PARAMETER<double> dlc;        // Delta L for C-V model
 390   PARAMETER<double> noia;       // Flicker noise parameter, oxide trap density A
 391   PARAMETER<double> noib;       // Flicker noise parameter, oxide trap density B
 392   PARAMETER<double> noic;       // Flicker noise parameter, oxide trap density C
 393   PARAMETER<double> em; // Flicker noise parameter V/m
 394   PARAMETER<double> ef; // Flicker noise frequency exponent
 395   PARAMETER<int> acnqsMod;      // AC NQS model selector
 396   PARAMETER<double> toxm;       // Gate oxide thickness used in extraction
 397   PARAMETER<double> lintnoi;    // lint offset for noise calculation
 398   PARAMETER<double> ijth;       // Diode limiting current
 399   PARAMETER<double> tpb;        // Temperature coefficient of pb
 400   PARAMETER<double> tcj;        // Temperature coefficient of cj
 401   PARAMETER<double> tpbsw;      // Temperature coefficient of pbsw
 402   PARAMETER<double> tcjsw;      // Temperature coefficient of cjsw
 403   PARAMETER<double> tpbswg;     // Temperature coefficient of pbswg
 404   PARAMETER<double> tcjswg;     // Temperature coefficient of cjswg
 405   PARAMETER<double> Llc;        // Length reduction parameter for CV
 406   PARAMETER<double> Lwc;        // Length reduction parameter for CV
 407   PARAMETER<double> Lwlc;       // Length reduction parameter for CV
 408   PARAMETER<double> Wlc;        // Width reduction parameter for CV
 409   PARAMETER<double> Wwc;        // Width reduction parameter for CV
 410   PARAMETER<double> Wwlc;       // Width reduction parameter for CV
 411   PARAMETER<int> acm;   // area calculation method, ignored
 412   PARAMETER<double> h0; // H for Hci
 413   PARAMETER<double> hci_m; // H for Hci
 414   PARAMETER<double> hci_n; // H for Hci
 415 public: // calculated parameters
 416   double cox;   //
 417   double factor1;       //
 418   double vt_at_tnom;    //
 419   double ni;    //
 420
 421   double dgmdl_eff(const DEV_BUILT_IN_MOS*) const;
 422   double dgmdw_eff(const DEV_BUILT_IN_MOS*) const;
 423
 424 };
 425 /*--------------------------------------------------------------------------*/
 426 /*--------------------------------------------------------------------------*/
 427 # if nonsense
 428 class DEV_BUILT_IN_MOS8 : public DEV_BUILT_IN_MOS {
 429   protected: // override virtual
 430     virtual double tr_probe_num(const std::string&)const;
 431     virtual double tt_probe_num(const std::string& x)const;
 432     double probe_num(const std::string& what)const
 433     {
 434       double x;
 435       if (_sim->analysis_is_tt()) {
 436         x = tt_probe_num(what);
 437       }else if (_sim->analysis_is_ac()) {
 438         x = ac_probe_num(what);
 439       }else{
 440         x = tr_probe_num(what);
 441       }
 442       return (std::abs(x)>=1) ? x : floor(x/OPT::floor + .5) * OPT::floor;
 443     }
 444 };
 445 #endif
 446 /*--------------------------------------------------------------------------*/
 447 }
 448 #endif