lib/template/mosdef.tcl

   1 #-------------------
   2 #  mosdef
   3 #-------------------
   4 #  Default Value File for MOS Structures
   5
   6 puts "Loading default MOS parameters..."
   7 puts "These settings can be overwrite by user"
   8
   9
  10
  11 #COMMENT   Structure Definitions
  12 #    LGATE    = gate length (microns)
  13 #    LSOURCE  = distance from left device edge
  14 #               to gate edge (microns)
  15 #    LSCONT   = length of source contact (microns)
  16 #    LDRAIN   = distance from right device edge
  17 #               to gate edge (microns)
  18 #    LDCONT   = length of drain contact (microns)
  19 #    LSPACER  = spacer thickness (microns)
  20 #    TOX      = gate oxide thickness (microns)
  21
  22 set LGATE     [ expr 1.0]
  23 set LSOURCE   [ expr 1.0]
  24 set LSCONT    [ expr 0.5]
  25 set LDRAIN    [ expr 1.0]
  26 set LDCONT    [ expr 0.5]
  27 set LSPACER   [ expr 0.2]
  28 set TOX       [ expr 0.0250]
  29
  30 #COMMENT   Doping Information
  31 #    TRANTYPE = transistor type (NMOS or PMOS)
  32 #    PROFTYPE = profile type (ANALYTIC, SUPREM3, TSUPREM4,
  33 #               or SUPRA)
  34 #    LATD     = source/drain and LDD lateral diffusion factor
  35 #  Analytic Profile Parameters
  36 #    NSUB     = substrate doping (#/cm^3)
  37 #    VTTYPE   = doping type for threshold adjust implant (N or P)
  38 #    VTPEAK   = peak doping for threshold adjust implant (#/cm^3)
  39 #    VTCHAR   = characteristic length
  40 #               for threshold implant (microns)
  41 #    SDPEAK   = peak doping for source/drain (#/cm^3)
  42 #    SDJUNC   = junction depth for source/drain (microns)
  43 #    LDDPEAK  = peak doping for lightly doped drain (#/cm^3)
  44 #    LDDJUNC  = junction depth for lightly doped drain (microns)
  45
  46
  47 set TRANTYPE  NMOS
  48 set PROFTYPE  ANALYTIC
  49 set LATD      [expr 0.80]
  50
  51 set NSUB      [expr 3E15]
  52 set VTTYPE    P
  53 set VTPEAK    [expr 2E16]
  54 set VTCHAR    [expr 0.25]
  55 set SDPEAK    [expr 1E20]
  56 set SDJUNC    [expr 0.25]
  57 set LDDPEAK   [expr 2E18]
  58 set LDDJUNC   [expr 0.35]
  59
  60
  61 #COMMENT   Grid Spacings, Ratio, Maximum Voltage
  62 #    CHANSP   = vertical grid spacing in the channel (microns)
  63 #    JUNCSP   = grid spacing at junctions (microns)
  64 #    RATIO    = grid spacing ratio
  65 #    VDBMAX   = maximum drain-substrate reverse bias (volts)
  66
  67 set CHANSP    [expr 0.0125]
  68 set JUNCSP    [expr 0.0250]
  69 set RATIO     [expr 1.4]
  70 set VDBMAX    [expr 5.0]
  71
  72 # COMMENT   Material of gate
  73 #    GATE    = gate material, default: PolySi
  74 if {$TRANTYPE == "PMOS"} {
  75  set GATE PPoly
  76 } else {
  77  set GATE NPoly
  78 }