4 # Default Value File for BJT Structure
6 puts "Loading default BJT parameters..."
7 puts "These settings can be overwrite by user"
9 #COMMENT Structure Definitions
10 # WEMIT = emitter width (microns)
11 # WECONT = emitter contact width (microns)
12 # WXBASE = extrinsic base width (microns)
13 # WBCONT = base contact width (microns)
14 # WEXB = emitter to extrinsic base distance (microns)
15 # BEOVER = base diffusion edge
16 # to emitter diffusion edge (microns)
17 # BXOVER = base diffusion edge
18 # to x-base diffusion edge (microns)
19 # TEPI = structure depth (epi thickness) (microns)
30 #COMMENT Doping Information
31 # TRANTYPE = transistor type (NPN or PNP)
32 # PROFTYPE = profile type (ANALYTIC, SUPREM3, TSUPREM4,
34 # LATD = lateral diffusion factor
35 # Analytic Profile Parameters
36 # NEPI = epitaxial layer doping (#/cm^3)
37 # BLPEAK = peak doping for buried layer (#/cm^3)
38 # BLDEPTH = depth of buried layer (microns)
39 # BPEAK = peak doping for intrinsic base (#/cm^3)
40 # YBPEAK = distance from surface
41 # to peak base doping (microns)
42 # BCJUNC = base-collector junction depth (microns)
43 # XBPEAK = peak doping for extrinsic base (#/cm^3)
44 # XBJUNC = extrinsic base-collector junction depth (microns)
45 # EPEAK = peak doping for emitter (#/cm^3)
46 # EBJUNC = emitter-base junction depth (microns)
65 #COMMENT Grid Spacings, Ratio, Maximum Voltage
66 # EBSP = grid spacing at emitter-base junction (microns)
67 # BCSP = grid spacing at collector-base junction (microns)
68 # RATIO = grid spacing ratio
69 # VCBMAX = maximum collector-base reverse bias (volts)